Photodétecteur davalanche APD 1064nm 500um TO46 économies photodiode

Title：	1064nm enhanced 500um TO46 APD avalanche photodetector photodiode
Specification:	Wavelength:400-1100nm Operating voltage:0.95xV_{BR_{Operating temperature:-40~+85℃ Storage temperature:-40~+100℃ Soldering temperature(time):260℃(10s) The opto-eletronic characteritics:(T=22±3℃) Response Spectrum: λ 400～1100 nm Active diameter:φ — 500 μm Reponsivity:Re λ=905nm, 1μw, M=1 0.57;}} λ=1064nm, 1μw, M=1 Multiplication gain: λ=1064nm, 1μw, 0.8VBR 100 λ=1064nm, 1μw, 0.85VBR 200 Response time:Tr M=100,RL=50Ω,λ=1064nm . 2.5 ns
Features:	 High reliability, low dark current  Top illumination Planar APD  High Gain up to M=400  Wavelength 400-1100nm  Hermetic TO46 Can or with receptacle or with fiber coupling
Applications:	 Ultra Weak pulse optical detecting  Laser lidar, laser range finding  Optical fiber sensor, OTDR  high resolution Optical Coherence Tomography  Science analysis and experiment
Package:	1x Avalanche Photodiode 1064nm 500um

Title：	1064nm enhanced 500um TO46 APD avalanche photodetector photodiode
Specification:	Wavelength:400-1100nm Operating voltage:0.95xV_{BR_{Operating temperature:-40~+85℃ Storage temperature:-40~+100℃ Soldering temperature(time):260℃(10s) The opto-eletronic characteritics:(T=22±3℃) Response Spectrum: λ 400～1100 nm Active diameter:φ — 500 μm Reponsivity:Re λ=905nm, 1μw, M=1 0.57;}} λ=1064nm, 1μw, M=1 Multiplication gain: λ=1064nm, 1μw, 0.8VBR 100 λ=1064nm, 1μw, 0.85VBR 200 Response time:Tr M=100,RL=50Ω,λ=1064nm . 2.5 ns
Features:	 High reliability, low dark current  Top illumination Planar APD  High Gain up to M=400  Wavelength 400-1100nm  Hermetic TO46 Can or with receptacle or with fiber coupling
Applications:	 Ultra Weak pulse optical detecting  Laser lidar, laser range finding  Optical fiber sensor, OTDR  high resolution Optical Coherence Tomography  Science analysis and experiment
Package:	1x Avalanche Photodiode 1064nm 500um

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